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STM32F756VG 数据表(PDF) 177 Page - STMicroelectronics |
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STM32F756VG 数据表(HTML) 177 Page - STMicroelectronics |
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177 / 228 page ![]() DocID027589 Rev 4 177/228 STM32F756xx Electrical characteristics 196 Synchronous waveforms and timings Figure 62 through Figure 65 represent synchronous waveforms and Table 96 through Table 99 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable; • MemoryType = FMC_MemoryType_CRAM; • WriteBurst = FMC_WriteBurst_Enable; • CLKDivision = 1; • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM • CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise specified. In all timing tables, the THCLK is the HCLK clock period. –For 2.7 V≤VDD≤3.6 V, maximum FMC_CLK = 108 MHz at CL=20 pF or 90 MHz at CL=30 pF (on FMC_CLK). –For 1.71 V≤VDD<2.7 V, maximum FMC_CLK = 70 MHz at CL=10 pF (on FMC_CLK). 1. Guaranteed by characterization results. Table 95. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) 1. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK 9THCLK+1.5 ns tw(NWE) FMC_NWE low time 7THCLK–0.5 7THCLK+0.5 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+2 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK–1 - |
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