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FT121Q-R 数据表(PDF) 36 Page - Future Technology Devices International Ltd.

部件名 FT121Q-R
功能描述  Enhanced USB Device Controller with SPI Slave IC
PDF  46 Pages
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制造商  FTDI [Future Technology Devices International Ltd.]
网页  http://www.ftdichip.com
标志 FTDI - Future Technology Devices International Ltd.

FT121Q-R 数据表(HTML) 36 Page - Future Technology Devices International Ltd.

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Copyright © 2014 Future Technology Devices International Limited
36
Document No.: FT_000648
FT121 ENHANCED USB DEVICE CONTROLLER WITH SPI SLAVE IC
Datasheet Version 1.2
Clearance No.: FTDI#
312
Parameter
Description
Minimum
Typical
Maximum
Units
Conditions
Voh
Output Voltage High
1.62
V
I source = 4mA
Vol
Output Voltage Low
0.4
V
I sink = 4mA
Vih
Input Voltage High
1.17
V
Vil
Input Voltage Low
-
0.63
V
Table 8.5 digital I/O Pin Characteristics (VCCIO=+1.8V)
Parameter
Description
Minimum
Typical
Maximum
Units
Conditions
UVoh
I/O Pins Static Output
(High)
2.8
3.6
V
RL = 1.5kΩ to 3.6
V
UVol
I/O Pins Static Output
(Low)
-
0.3
V
RL = 15kΩ to GND
UVse
Single Ended Rx
Threshold
0.8
2.0
V
UCom
Differential Common
Mode
0.8
2.5
V
UVDif
Differential Input
Sensitivity
0.2
V
UDrvZ
Driver Output
Impedance
29
-
44
Ω
Including external
27 Ω ±1% series
resistor
Table 8.6 USB I/O Pin (DP, DM) Characteristics
8.3 AC Characteristics
Symbol
Parameter
VCCIO=3.3V VCCIO=1.8V
Unit
Min
Max
Min
Max
t1
SCLK period
50
60
ns
t2
SCLK High period
25
30
ns
t3
SCLK Low period
25
30
ns
t4
SCLK driving edge to MOSI valid (3-wire mode)
SCLK driving edge to MISO valid (4-wire mode)
5
15
8
22
ns
t5
MOSI data setup time to sample SCLK edge
5
6
ns
t6
MOSI data hold time from sample SCLK edge
5
5
ns



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