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STM32F303VC 数据表(PDF) 79 Page - STMicroelectronics |
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STM32F303VC 数据表(HTML) 79 Page - STMicroelectronics |
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79 / 148 page ![]() DocID023353 Rev 13 79/148 STM32F303xB STM32F303xC Electrical characteristics 124 Figure 17. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.8 Internal clock source characteristics The parameters given in Table 44 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 24. High-speed internal (HSI) RC oscillator Table 44. HSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 8 - MHz TRIM HSI user trimming step - - - 1(2) 2. Guaranteed by design. % DuCy(HSI) Duty cycle - 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator TA = -40 to 105°C -2.8(3) 3. Guaranteed by characterization results. -3.8(3) % TA = -10 to 85°C -1.9(3) -2.3(3) TA = 0 to 85°C -1.9(3) -2(3) TA = 0 to 70°C -1.3(3) -2(3) TA = 0 to 55°C -1(3) -2(3) TA = 25°C(4) 4. Factory calibrated, parts not soldered. -1 - 1 tsu(HSI) HSI oscillator startup time - 1(2) -2(2) µs IDDA(HSI) HSI oscillator power consumption - - 80 100(2) µA |
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