| 数据搜索系统,热门电子元器件搜索 |
|
STM32F303VC 数据表(PDF) 83 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F303VC 数据表(HTML) 83 Page - STMicroelectronics |
|
83 / 148 page ![]() DocID023353 Rev 13 83/148 STM32F303xB STM32F303xC Electrical characteristics 124 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 6.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114, ANSI/ESD STM5.3.1 standard. Table 50. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8/72 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP100 package compliant with IEC 61967-2 0.1 to 30 MHz 7 dBµV 30 to 130 MHz 20 130 MHz to 1GHz 27 SAE EMI Level 4 - Table 51. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Guaranteed by characterization results. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to JESD22-A114 22000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESD STM5.3.1 WLCSP100 package 3 250 Packages except WLCSP100 4 500 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |