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STM32F303VC 数据表(PDF) 124 Page - STMicroelectronics |
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STM32F303VC 数据表(HTML) 124 Page - STMicroelectronics |
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124 / 148 page ![]() Electrical characteristics STM32F303xB STM32F303xC 124/148 DocID023353 Rev 13 6.3.23 VBAT monitoring characteristics Table 80. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50 - K Ω Q Ratio on VBAT measurement -2- Er(1) 1. Guaranteed by design. Error on Q -1 - +1 % TS_vbat(1)(2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the VBAT 1mV accuracy 2.2 - - µs |
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