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ST7LITEUS2 数据表(PDF) 106 Page - STMicroelectronics |
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ST7LITEUS2 数据表(HTML) 106 Page - STMicroelectronics |
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106 / 136 page ![]() Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristics ST7LITEUS2, ST7LITEUS5 106/136 12.7.2 Electromagnetic Interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. 12.7.3 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU and DLU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated: Human Body Model. This test conforms to the JESD22-A114A/A115A standard. Static and dynamic latchup ● LU: 3 complementary static tests are required on 10 parts to assess the latchup performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latchup standard. For more details, refer to the application note AN1181. ● DLU: Electrostatic discharges (one positive then one negative test) are applied to each pin of 3 samples when the micro is running to assess the latchup performance in Table 60. EMI characteristics(1) 1. Data based on characterization results, not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. [fOSC/fCPU] Unit -/8 MHz SEMI Peak level VDD=5V, TA=+25 °C, SO8 package, conforming to SAE J 1752/3 0.1 MHz to 30 MHz 21 dB μV 30 MHz to 130 MHz 23 130 MHz to 1GHz 10 SAE EMI Level 3 - Table 61. Absolute maximum ratings Symbol Ratings Conditions Maximum value(1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA=+25°C > 4000 V Obsolete Product(s) - Obsolete Product(s) |
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