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ST7LITEUS2 数据表(PDF) 106 Page - STMicroelectronics

部件名 ST7LITEUS2
功能描述  Interrupt management
PDF  136 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7LITEUS2 数据表(HTML) 106 Page - STMicroelectronics

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Electrical characteristics
ST7LITEUS2, ST7LITEUS5
106/136
12.7.2
Electromagnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
12.7.3
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: Human Body Model. This test conforms to the JESD22-A114A/A115A
standard.
Static and dynamic latchup
LU: 3 complementary static tests are required on 10 parts to assess the latchup
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latchup standard. For more details,
refer to the application note AN1181.
DLU: Electrostatic discharges (one positive then one negative test) are applied to each
pin of 3 samples when the micro is running to assess the latchup performance in
Table 60.
EMI characteristics(1)
1.
Data based on characterization results, not tested in production.
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fOSC/fCPU]
Unit
-/8 MHz
SEMI
Peak level
VDD=5V, TA=+25 °C,
SO8 package,
conforming to SAE J
1752/3
0.1 MHz to
30 MHz
21
dB
μV
30 MHz to
130 MHz
23
130 MHz to
1GHz
10
SAE EMI Level
3
-
Table 61.
Absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA=+25°C
> 4000
V
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