ST10F166 datasheet(11/62 Pages) STMICROELECTRONICS

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ST10F166

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4 FLASH MEMORY

The ST10F166 provides, in addition to the RAM, 32 k bytes of Electrically Erasable

and reprogram-mable non-volatile (FLASH) memory. This memory is organised as

8K x 32 bit allowing a complete instruction to be read during one instruction fetch cy-

cle. Data values stored can be read as 16 bit operands using all addressing modes of

ST10F166 instruction set.

The FLASH memory is located in segment 0 (0 to 07FFFh) during reset, and thus

contains the reset and interrupt vectors. To provide full flexibility in the use of the

ST10F166, the FLASH memory may be remapped to segment ~ ( 0000 to 17FFFh)

during initialization. This allows the interrupt vector to be programmed from external

memory, while retaining the common routines and constants programmed into the

FLASH memory.

For ease of program updating, the FLASH memory is organised into 4 banks, each of

which may be independently Erased.

Table 2. FLASH memory Bank Organisation

Bank

Addresses

(Segment 0)

Size

(bytes)

00000h to 02FFFh

03000h to 05FFFh

06000h to 077FFh

07800h to 07FFFh

12K

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