ST10F166 datasheet(12/62 Pages) STMICROELECTRONICS

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ST10F166

5 FLASH MEMORY PROGRAMMING AND ERASURE

The FLASH memory is programmed using the PRESTO F Program Write algorithm for

reliability. This algorithm provides a typical programming time of 25

µs per word and

erasing of 1s per bank.

Erasure of the FLASH memory is performed in the program mode using the PRESTO

F Erase algo-rithm, and operates on the selected bank of the memory.

Timing of the Write/Erase cycles is automatically generated by a programmable timer

and completion is indicated by a flag. A second flag indicates that the V

PP voltage was

correct for the whole programming cycle to ensure reliability.

The FLASH memory features a typical endurance of 100 Erase/Program cycles.

6 FLASH MEMORY SECURITY

Security and reliability are enhanced by the built-in features. A key code sequence is

used to enter the Write/Erase mode preventing false write cycles, while a program-

mable option (set by the programming board) prevent any access to the FLASH

memory from the internal RAM or from External Memory. If the security option is set,

the FLASH memory is accessed only from program within the FLASH memory area.

This protection may be disabled by instructions executed from the FLASH memory

only (when not in write/erase mode).

ST10F166 数据表(PDF) 12 Page - STMicroelectronics