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STM32F405 数据表(PDF) 84 Page - STMicroelectronics

部件名 STM32F405
功能描述  Arm® Cortex®-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
PDF  204 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F405 数据表(HTML) 84 Page - STMicroelectronics

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Electrical characteristics
STM32F405xx, STM32F407xx
84/203
DS8626 Rev 9
5.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 22: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
At startup, all I/O pins are configured as analog inputs by firmware.
All peripherals are disabled except if it is explicitly mentioned.
The Flash memory access time is adjusted to fHCLK frequency (0 wait state from 0 to
30 MHz, 1 wait state from 30 to 60 MHz, 2 wait states from 60 to 90 MHz, 3 wait states
from 90 to 120 MHz, 4 wait states from 120 to 150 MHz, and 5 wait states from 150 to
168 MHz).
When the peripherals are enabled HCLK is the system clock, fPCLK1 = fHCLK/4, and
fPCLK2 = fHCLK/2, except is explicitly mentioned.
The maximum values are obtained for VDD = 3.6 V and maximum ambient temperature
(TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless otherwise specified.
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
V
Rising edge
2.53
2.59
2.63
V
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
V
Rising edge
2.85
2.92
2.97
V
VBORhyst(1)
BOR hysteresis
-
-
100
-
mV
TRSTTEMPO(1)(2) Reset temporization
-
0.5
1.5
3.0
ms
IRUSH(1)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
-
-
160
200
mA
ERUSH(1)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
VDD = 1.8 V, TA = 105 °C,
IRUSH = 171 mA for 31 µs
--
5.4
µC
1. Guaranteed by design.
2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant
when first instruction is read by the user application code.
Table 19. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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