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STM32F405 数据表(PDF) 99 Page - STMicroelectronics

部件名 STM32F405
功能描述  Arm® Cortex®-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
PDF  204 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F405 数据表(HTML) 99 Page - STMicroelectronics

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DS8626 Rev 9
99/203
STM32F405xx, STM32F407xx
Electrical characteristics
5.3.8
External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Table 30 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.
Table 29. Low-power mode wakeup timings
Symbol
Parameter
Min(1)
Typ(1)
Max(1)
Unit
tWUSLEEP(2)
Wakeup from Sleep mode
-
5
-
CPU
clock
cycle
tWUSTOP(2)
Wakeup from Stop mode (regulator in Run mode and
Flash memory in Stop mode)
-13
-
µs
Wakeup from Stop mode (regulator in low-power mode
and Flash memory in Stop mode)
-17
40
Wakeup from Stop mode (regulator in Run mode and
Flash memory in Deep power-down mode)
-105
-
Wakeup from Stop mode (regulator in low-power mode
and Flash memory in Deep power-down mode)
-110
-
tWUSTDBY(2)(3)
Wakeup from Standby mode
260
375
480
µs
1. Guaranteed by characterization.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.
Table 30. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
External user clock source
frequency(1)
-
1-
50
MHz
VHSEH
OSC_IN input pin high level voltage
0.7VDD
-VDD
V
VHSEL
OSC_IN input pin low level voltage
VSS
-0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
1. Guaranteed by design.
5-
-
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1)
--
10
Cin(HSE) OSC_IN input capacitance(1)
--
5
-
pF
DuCy(HSE) Duty cycle
-
45
-
55
%
IL
OSC_IN Input leakage current
VSS ≤ VIN ≤ VDD
--
±1
µA



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