STM32H757AI datasheet(115/251 Pages) STMICROELECTRONICS

115 / 251 page

DS12931 Rev 1

115/251

STM32H757xI

Electrical characteristics

230

6.3.5

Embedded reset and power control block characteristics

The parameters given in Table 29 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 23: General operating

conditions.

Table 29. Reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tRSTTEMPO(1)

Reset temporization

after BOR0 released

377

µs

VBOR0

Brown-out reset threshold 0

Rising edge(1)

1.62

1.67

1.71

Falling edge

1.58

1.62

1.68

VBOR1

Brown-out reset threshold 1

Rising edge

2.04

2.10

2.15

Falling edge

1.95

2.00

2.06

VBOR2

Brown-out reset threshold 2

Rising edge

2.34

2.41

2.47

Falling edge

2.25

2.31

2.37

VBOR3

Brown-out reset threshold 3

Rising edge

2.63

2.70

2.78

Falling edge

2.54

2.61

2.68

VPVD0

Programmable Voltage

Detector threshold 0

Rising edge

1.90

1.96

2.01

Falling edge

1.81

1.86

1.91

VPVD1

Programmable Voltage

Detector threshold 1

Rising edge

2.05

2.10

2.16

Falling edge

1.96

2.01

2.06

VPVD2

Programmable Voltage

Detector threshold 2

Rising edge

2.19

2.26

2.32

Falling edge

2.10

2.15

2.21

VPVD3

Programmable Voltage

Detector threshold 3

Rising edge

2.35

2.41

2.47

Falling edge

2.25

2.31

2.37

VPVD4

Programmable Voltage

Detector threshold 4

Rising edge

2.49

2.56

2.62

Falling edge

2.39

2.45

2.51

VPVD5

Programmable Voltage

Detector threshold 5

Rising edge

2.64

2.71

2.78

Falling edge

2.55

2.61

2.68

VPVD6

Programmable Voltage

Detector threshold 6

Rising edge

2.78

2.86

2.94

Falling edge in Run mode

2.69

2.76

2.83

Vhyst_BOR_PVD

Hysteresis voltage of BOR

(unless BOR0) and PVD

Hysteresis in Run mode

100

IDD_BOR_PVD(1)

BOR(2) (unless BOR0) and

PVD consumption from VDD

0.630

µA

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