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STM32H757AI 数据表(PDF) 118 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 118 Page - STMicroelectronics |
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118 / 251 page  Electrical characteristics STM32H757xI 118/251 DS12931 Rev 1 Table 32. Typical and maximum current consumption in Run mode, code with data processing running from ITCM for Cortex-M7 core, and Flash memory for Cortex-M4 (ART accelerator ON), LDO regulator ON(1)(2) Symbol Parameter Conditions Arm Cortex- M7 fCPU1 (MHz) Arm Cortex- M4 fCPU2 (MHz) Typ Max(3) Unit Tj= 25 °C Tj= 85 °C Tj= 105°C Tj= 125°C IDD Supply current in Run mode All peripherals disabled VOS0 480 240 179 272 387 498 mA 400 200 151 - - - VOS1 400 200 132 181 292 382 502 VOS2 300 150 91 122 211 281 377 VOS3 200 100 56 79 150 206 284 All peripherals enabled VOS0 480 240 247 374 462 571 400 200 208 - - - VOS1 400 200 181 232 337 422 541 VOS2 300 150 126 163 248 318 414 VOS3 200 100 78 104 173 229 307 1. Data are in DTCM for best computation performance, the cache has no influence on consumption in this case. 2. The grayed cells correspond to the forbidden configurations. 3. Guaranteed by characterization results, unless otherwise specified. Table 33. Typical and maximum current consumption in Run mode, code with data processing running from ITCM for Arm Cortex-M7 and Flash memory for Arm Cortex-M4, ART accelerator ON, SMPS regulator(1) Symbol Parameter Conditions Arm Cortex- M7 fCPU1 (MHz) Arm Cortex- M4 fCPU2 (MHz) Typ Max Unit Tj= 25 °C Tj= 85 °C Tj= 105°C Tj= 125°C IDD Supply current in Run mode All peripherals disabled VOS1 400 200 58.3 79.0 129.0 175.1 236.0 mA VOS2 300 150 37.0 50.2 84.7 115.6 161.1 VOS3 200 100 21.5 29.9 56.1 77.1 107.6 All peripherals enabled VOS1 400 200 78.1 100.1 148.9 193.4 254.3 VOS2 300 150 51.2 65.5 100.8 130.9 176.9 VOS3 200 100 29.5 39.4 63.9 86.7 116.3 1. The parameters given in the above table for the SMPS regulator are derived by extrapolation from the LDO consumption and typical SMPS efficiency factors . |
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