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STM32H757AI 数据表(PDF) 122 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 122 Page - STMicroelectronics |
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122 / 251 page ![]() Electrical characteristics STM32H757xI 122/251 DS12931 Rev 1 Table 39. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory, only Arm Cortex-M7 running, cache OFF, LDO regulator ON(1) Symbol Parameter Conditions fCPU1 (MHz) Typ Max(2) Unit Tj=25°C Tj=85°C Tj=105 °C Tj=125 °C IDD Supply current in Run mode All peripherals disabled VOS0 480 87 157 259 342 mA VOS1 400 73 123 201 267 355 VOS2 300 52 85 150 204 277 VOS3 200 34 54 109 152 212 All peripherals enabled VOS0 480 168 276 390 504 VOS1 400 135 224 308 397 519 VOS2 300 100 154 228 301 401 VOS3 200 70 103 167 226 307 1. The grayed cells correspond to the forbidden configurations. 2. Guaranteed by characterization results, unless otherwise specified. Table 40. Typical and maximum current consumption batch acquisition mode, LDO regulator ON Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit Tj=25°C Tj=85°C Tj=105 °C Tj=125 °C IDD Supply current in batch acquisition mode D1 Standby, D2 Standby, D3 Run VOS3 64 2.7 4.7 12.9 19.0 27.5 mA 8 1.1 ---- D1 Stop, D2 Stop, D3 Run VOS3 64 5.4 18.4 83.7 132.6 202.4 8 3.8 ---- 1. Guaranteed by characterization results, unless otherwise specified. |
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