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数据搜索系统，热门电子元器件搜索 |
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STM32H757AI 数据表(PDF) 120 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 120 Page - STMicroelectronics |
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120 / 251 page  Electrical characteristics STM32H757xI 120/251 DS12931 Rev 1 Table 36. Typical and maximum current consumption in Run mode, code with data processing running from ITCM, only Arm Cortex-M7 running, LDO regulator ON(1)(2) Symbol Parameter Conditions fCPU1 (MHz) Typ Max(3) Unit Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD Supply current in Run mode All peripherals disabled VOS0 480 148 226 307 390 mA 400 125 - - - VOS1 400 110 168 230 296 384 300 84 ---- VOS2 300 76 114 170 224 297 216 56 88 152 205 278 200 53 ---- VOS3 200 47 71 121 164 223 180 43 64 116 159 218 168 40 63 115 158 217 144 35 55 109 153 212 60 16 36 92 135 194 25 12 24 83 126 185 All peripherals enabled VOS0 480 226 222 439 550 400 190 - - - VOS1 400 167 222 327 416 536 300 135 ---- VOS2 300 122 160 248 320 419 200 85 ---- VOS3 200 76 103 174 233 313 1. Data are in DTCM for best computation performance, the cache has no influence on consumption in this case. 2. The grayed cells correspond to the forbidden configurations. 3. Guaranteed by characterization results, unless otherwise specified. |
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