STM32H757AI datasheet(123/251 Pages) STMICROELECTRONICS

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DS12931 Rev 1

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STM32H757xI

Electrical characteristics

230

Table 41. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory, only Arm Cortex-M4 running, ART accelerator ON,

LDO regulator ON(1)

Symbol

Parameter

Conditions

fCPU2

(MHz)

Typ

Max(2)

Unit

Tj=25

°C

Tj=85

°C

Tj=105

°C

Tj=125

°C

IDD

Supply

current in

Run mode

All

peripherals

disabled

VOS0

240

121

203

339

453

200

VOS1

200

123

234

323

444

150

---

VOS2

150

178

250

350

VOS3

100

131

189

269

All

peripherals

enabled

VOS0

240

190

303

412

525

200

146

VOS1

200

129

195

287

376

499

VOS2

150

134

214

287

386

VOS3

100

158

216

297

1. The grayed cells correspond to the forbidden configurations.

2. Guaranteed by characterization results, unless otherwise specified.

Table 42. Typical and maximum current consumption in Run mode, code with data processing

running from Flash bank 2, only Arm Cortex-M4 running, ART accelerator ON,

SMPS regulator(1)

Symbol

Parameter

Conditions

Typ

Max

Unit

Tj=25

°C

Tj=85

°C

Tj=105

°C

Tj=125

°C

IDD

Supply

current in Run

mode

All

peripherals

disabled

VOS1

35.3

54.3

102.1

144.4

203.5

VOS2

23.3

35.0

70.6

99.2

145.8

VOS3

13.6

22.3

49.0

69.8

101.9

All

peripherals

enabled

VOS1

57.0

84.1

126.8

172.3

234.6

VOS2

36.6

54.5

84.9

118.1

165.0

VOS3

23.1

37.4

58.4

79.8

112.5

1. The parameters given in the above table for the SMPS regulator are derived by extrapolation from the LDO consumption

and typical SMPS efficiency factors

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