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STM32H757AI 数据表(PDF) 127 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 127 Page - STMicroelectronics |
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127 / 251 page ![]() DS12931 Rev 1 127/251 STM32H757xI Electrical characteristics 230 Table 47. Typical and maximum current consumption in Standby Symbol Parameter Conditions Typ Max(1) Unit 1.62 V 2.4 V 3 V 3.3 V 3 V Backup SRAM RTC and LSE Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD (Standby) Supply current in Standby mode OFF OFF 1,92 1,95 2,06 2,16 4 18 40 90 µA ON OFF 3,33 3,44 3,6 3,79 8.2 47 83 141 OFF ON 2,43 2,57 2,77 2,95 - - - - ON ON 3,82 4,05 4,31 4,55 - - - - 1. Guaranteed by characterization results, unless otherwise specified. Table 48. Typical and maximum current consumption in VBAT mode Symbol Parameter Conditions Typ Max(1) Unit Backup SRAM RTC and LSE 1.2 V 2 V 3 V 3.4 V 3 V Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD (VBAT) Supply current in VBAT mode OFF OFF 0,02 0,02 0,03 0,05 0,5 4,1 10 24 µA ON OFF 1,33 1,45 1,58 1,7 4,4 22 48 87 OFF ON 0,46 0,57 0,75 0,87 - - - - ON ON 1,77 2 2,3 2,5 - - - - 1. Guaranteed by characterization results, unless otherwise specified. |
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