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STM32H757AI 数据表(PDF) 226 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 226 Page - STMicroelectronics |
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226 / 251 page ![]() Electrical characteristics STM32H757xI 226/251 DS12931 Rev 1 USB OTG_HS characteristics Unless otherwise specified, the parameters given in Table 126 for ULPI are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage summarized in Table 23: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Capacitive load CL=20 pF • Measurement points are done at CMOS levels: 0.5VDD • IO Compensation cell activated. • VOS level set to VOS1 Refer to Section 6.3.18: I/O port characteristics for more details on the input/output characteristics. Figure 66. ULPI timing diagram Table 126. Dynamics characteristics: USB ULPI(1) 1. Guaranteed by characterization results. Symbol Parameter Condition Min Typ Max Unit tSC Control in (ULPI_DIR , ULPI_NXT) setup time -2.5 - - ns tHC Control in (ULPI_DIR, ULPI_NXT) hold time -2 - - tSD Data in setup time - 2.5 - - tHD Data in hold time - 0 - - tDC/tDD Control/Datal output delay 2.7<VDD<3.6 V CL=20 pF -9 9.5 1.71<VDD<3.6 V CL=15 pF -9 14 Clock Control In (ULPI_DIR, ULPI_NXT) data In (8-bit) Control out (ULPI_STP) data out (8-bit) tDD tDC tHD tSD tHC tSC ai17361c tDC |
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