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STM32U535NET3QTR 数据表(PDF) 22 Page - STMicroelectronics

部件名 STM32U535NET3QTR
功能描述  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR 数据表(HTML) 22 Page - STMicroelectronics

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Functional overview
STM32U535xx
22/278
DS14217 Rev 1
Supported cache accesses:
Both write-back and write-through policies supported (selectable with AHB
bufferable attribute)
Read and write-back always allocated
Write-through always non-allocated (write-around)
Byte, half-word and word writes supported
TrustZone security support
Maintenance operations for software management of cache coherency:
Full cache invalidation (non interruptible)
Address range clean and/or invalidate operations (background task, interruptible)
Error management: detection of error for master port request initiated by DCACHE (line
eviction or clean operation), with optional interrupt raising
3.3
Memory protection unit
The MPU (memory protection unit) is used to manage the CPU accesses to the memory
and to prevent one task to accidentally corrupt the memory or the resources used by any
other active task. This memory area is organized into up to 16 protected areas.
The MPU regions and registers are banked across secure and nonsecure states.
The MPU is especially helpful for applications where some critical or certified code must be
protected against the misbehavior of other tasks. It is usually managed by a RTOS
(real-time operating system).
If a program accesses a memory location that is prohibited by the MPU, the RTOS can
detect it and take action. In a RTOS environment, the kernel can dynamically update the
MPU area setting based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.4
Embedded flash memory
The devices feature up to 512-Kbyte embedded flash memory that is available for storing
programs and data. The flash memory supports up to 100 000 cycles.
A 128-bit instruction prefetch is implemented and can optionally be enabled.
The flash memory interface features:
Dual-bank operating modes
Read-while-write (RWW)
This allows a read operation to be performed from one bank while an erase or program
operation is performed to the other bank. The dual-bank boot is also supported. Each bank
contains 32 pages of 8 Kbytes. The flash memory also embeds 512-byte OTP (one-time
programmable) for user data.
The whole non-volatile memory embeds the ECC (error correction code) feature supporting:
single-error detection and correction
double-error detection
ECC fail address report



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