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STM32U535NET3QTR 数据表(PDF) 223 Page - STMicroelectronics |
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STM32U535NET3QTR 数据表(HTML) 223 Page - STMicroelectronics |
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223 / 278 page  DS14217 Rev 1 223/278 STM32U535xx Electrical characteristics 253 5.3.20 Temperature sensor characteristics 5.3.21 VCORE monitoring characteristics 5.3.22 VBAT monitoring characteristics Table 107. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) VSENSE linearity with temperature - - 1.3 °C Avg_Slope(1) Average slope 2 2.5 3.0 mV/°C V30(2) Voltage at 30°C (±1 °C) 700 752 800 mV ∆(Vcontinuous - Vsampling)(3) Difference of voltage between continuous and sampling modes(4) - - –10/+4 tSTART (TS_BUF) (3) Sensor buffer startup time - 1 10 µs tS_temp(3) ADC sampling time when reading the temperature 13 - - IDD(TS)(3) Temperature sensor consumption from VDD, when selected by ADC -14 20 µA 1. Evaluated by characterization. Not tested in production. 2. Measured at VREF+ = VDDA = 3.0 V ±10 mV. The V30 A/D conversion result is stored in the TS_CAL1 byte. Refer to Table 16: Temperature sensor calibration values. 3. Specified by design. Not tested in production. 4. The temperature sensor is in continuous mode when the regulator is in range 1, 2 or 3. The temperature sensor is in sampling mode when the regulator is in range 4, or when the device is in Stop 1 or Stop 2 mode. Table 108. VCORE monitoring characteristics(1) Symbol Parameter Min Typ Max Unit tS_VCORE ADC sampling time when reading the VCORE voltage 1- - µs 1. Specified by design. Not tested in production. Table 109. VBAT monitoring characteristics(1) Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT - 4 × 25.6 - kΩ Q Ratio on VBAT measurement - 4 - - Er(2) Error on Q -5 - 5 % tS_VBAT(2) ADC sampling time when reading the VBAT 5 - - µs 1. 1.58 V ≤ VBAT ≤ 3.6 V 2. Specified by design. Not tested in production. |
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