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M95M02-DF 数据表(PDF) 28 Page - STMicroelectronics |
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M95M02-DF 数据表(HTML) 28 Page - STMicroelectronics |
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28 / 45 page ![]() 9 DC and AC parameters This section summarizes the operating conditions and the DC/AC characteristics. Table 8. Operating conditions (M95M02-DR, device grade 6) Symbol Parameter Min. Max. Unit VCC Supply voltage 1.8 5.5 V TA Ambient operating temperature -40 85 °C Table 9. Operating conditions (M95M02-DF, device grade 5) Symbol Parameter Min. Max. Unit VCC Supply voltage 1.7 5.5 V TA Ambient operating temperature -20 85 °C Table 10. AC measurement conditions Symbol Parameter Min. Max. Unit CL Load capacitance - 30 pF - Input rise and fall times - 25 ns - Input pulse voltages 0.2 VCC to 0.8 VCC V - Input and output timing reference voltages 0.3 VCC to 0.7 VCC V Figure 20. AC measurement I/O waveform 0.8 ₓ VCC 0.2 ₓ VCC 0.7 ₓ VCC 0.3 ₓ VCC Input and Output Timing Reference Levels Input Levels Table 11. Cycling performance by groups of four bytes Symbol Parameter Test condition Min. Max. Unit Ncycle Write cycle endurance(1) TA ≤ 25 °C, VCC(min) < VCC < VCC(max) - 4,000,000 Write cycle (2) TA = 85 °C, VCC(min) < VCC < VCC(max) - 1,200,000 1. The write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3], where N is an integer. The write cycle endurance is defined by characterization and qualification. 2. A write cycle is executed when either a page write, a byte write, a WRSR, a WRID or an LID instruction is decoded. When using the byte write, the page write or the WRID instruction, refer also to Section 6.6.1 Cycling with error correction code (ECC x4). M95M02-DR M95M02-DF DC and AC parameters DS7024 - Rev 13 page 28/45 |
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