Table 12. Memory cell data retention

Parameter

Test conditions

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. The data retention behaviour is checked in production, while the 200-year limit is defined from characterization and

qualification results.

Table 13. Capacitance

Symbol

Parameter

Test conditions(1)

Min.

Max.

Unit

COUT

Output capacitance (Q)

VOUT = 0 V

-

8

pF

CIN

Input capacitance (D)

VIN = 0 V

-

8

pF

Input capacitance (other pins)

VIN = 0 V

-

6

pF

1. Evaluated by characterization – not tested in production.

Table 14. DC characteristics

Symbol

Parameter

Test conditions

Min

Max

Unit

ILI

Input leakage current

VIN = VSS or VCC

-

±2

µA

ILO

Output leakage current

S= VCC, VOUT = VSS or VCC

-

±2

ICC

Supply current (Read)

C = 0.1 VCC / 0.9 VCC at 5 MHz,

1.8 V(1) ≤ VCC ≤ 5.5 V, Q = open

-

3

mA

ICC0(2)

Supply current (Write)

During tW, S = VCC,

-

3

mA

ICC1

Supply current

(Standby power mode)

S= VCC, VIN= VSS or VCC, VCC = 1.8 V(1)

-

3

µA

S= VCC, VIN = VSS or VCC, 1.8 V(1) ≤ VCC < 2.5 V

-

5

S= VCC, VIN = VSS or VCC, 2.5 V ≤ VCC ≤ 5.5 V

-

5

VIL

Input low voltage

1.8 V(1) ≤ VCC < 2.5 V

-0.45

0.25 VCC

V

2.5 V ≤ VCC ≤ 5.5 V

-0.45

0.30 VCC

VIH

Input high voltage

1.8 V(1) ≤ VCC < 2.5 V

0.75 VCC

VCC + 1

2.5 V ≤ VCC ≤ 5.5 V

0.70 VCC

VCC + 1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.8 V(1)

-

0.3

VCC = 2.5 V, IOL = 1.5 mA, or

VCC = 5.0 V, IOL = 2.0 mA

-

0.4

VOH

Output high voltage

IOH = -0.1 mA, VCC = 1.8 V(1)

0.80 VCC

-

VCC = 2.5 V, IOH = -0.4 mA, or

VCC = 5 V, IOH = -2.0 mA

1. VCC = 1.7 V for M95M02-DF.

2. Evaluated by characterization - not tested in production.

M95M02-DR M95M02-DF

DC and AC parameters

DS7024 - Rev 13

page 29/45