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ST92F124 数据表(PDF) 60 Page - STMicroelectronics |
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ST92F124 数据表(HTML) 60 Page - STMicroelectronics |
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60 / 429 page  60/429 ST92F124/F150/F250 - SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM) 3.4 WRITE OPERATION EXAMPLE Each operation (both Flash and E3 TM) is activated by a sequence of instructions like the following: OR FCR, #OPMASK ;Operation selection LD ADD1, #DATA1 ;1st Add and Data LD ADD2, #DATA2 ;2nd Add and Data .. ...., ...... LD ADDn, #DATAn ;nth Add and Data ;n range = (1 to 16) OR FCR, #80h ;Operation start The first instruction is used to select the desired operation by setting its corresponding selection bit in the Control Register (FCR for Flash operations, ECR for E3 TM operations). The load instructions are used to set the address- es (in the Flash or in the E3 TM memory space) and the data to be modified. The last instruction is used to start the write oper- ation, by setting the start bit (FWMS for Flash op- erations, EWMS for E3 TM operation) in the Control register. Once selected, but not yet started, one operation can be cancelled by resetting the operation selec- tion bit. Any latched address and data will be reset. Warning: during the Flash Page Program or the E3 TM Page Update operation it is forbidden to change the page address: only the last page address is ef- fectively kept and all programming will effect only that page. A summary of the available Flash and E3 TM write operations are shown in the following tables: Table 11. Flash Write Operations Table 12. E3 TM Write Operations Operation Selection bit Addresses and Data Start bit Typical Duration Byte Program FBYTE 1 byte FWMS 10 µs Page Program FPAGE From 1 to 16 bytes FWMS 160 µs (16 bytes) Sector Erase FSECT From 1 to 4 sectors FWMS 1.5 s (1 sector) Sector Erase Suspend FSUSP None None 15 µs Chip Erase FCHIP None FWMS 3 s Set Protection PROT From 1 to 4 bytes FWMS 40 µs (4 bytes) Operation Selection bit Addresses and Data Start bit Typical Duration Page Update EPAGE From 1 to 16 bytes EWMS 30 ms Chip Erase ECHIP None EWMS 9 |
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