TCS3530 datasheet(12/106 Pages) OSRAM

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Datasheet, Public

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[v3-00] 2023-Jun-23

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TCS3530 − Electrical Characteristics

Parameters listed under Test Level 4 are guaranteed with

production tests and SQC (Statistical Quality Control).

Parameters listed under Test Level 3 are measured in-line with

transparent monitor glasses. Parameters listed under Test Level

2 are measured in lab bench characterization. Parameters listed

under Test Level 1 are guaranteed by design. All Test Levels are

measured with VDD = 1.8V and TA = 25°C unless otherwise noted.

Figure 12:

Electrical Characteristics of TCS3530, VDD = 1.8 V, TA = 25°C (unless otherwise noted)

Note(s):

1. This parameter indicates the supply current during periods of ALS integration. The ALS gain setting will have an effect on the active

supply current. The ALS gain setting used for this parameter is 128x.

2. Idle state occurs when PON=1 and all functions are disabled.

3. Sleep state occurs when PON = 0 and I²C/I3C bus is idle. If Sleep state has been entered as the result of operational flow, SAI = 1,

PON will remain high.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Test

Level

IDD;ALS

ALS supply current

Active ALS state (1)

(PON=AEN=1)

485

560

μA

IDD;IDLE

Idle current

Idle state (2)

(PON=1, AEN=0)

130

IDD;SLEEP

Sleep current

Sleep state (3)

0.7

5.0

ILEAK

Leakage current

Measured on SDA, SCL, INT,

GPIO

-5

Electrical Characteristics

TCS3530 数据表(PDF) 12 Page - OSRAM GmbH

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