ST10F272M datasheet(148/175 Pages) STMICROELECTRONICS

148 / 175 page

Electrical characteristics

ST10F272M

148/176

24.8.11

Main oscillator specifications

VDD = 5V ± 10%, VSS = 0V, TA = -40 to +125°C

Figure 47.

Crystal oscillator and resonator connection diagram

The given values of CA do not include the stray capacitance of the package and of the

printed circuit board: the negative resistance values are calculated assuming additional 5pF

to the values in the table. The crystal shunt capacitance (C0) and the package capacitance

between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.

The external resistance between XTAL1 and XTAL2 is not necessary, since already present

on the silicon.

Table 64.

Main oscillator characteristics

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

Oscillator

Transconductance

1.4

2.6

4.2

mA/V

VOSC

Oscillation Amplitude(1)

Not 100% tested, guaranteed by design characterization

Peak to Peak

–

1.5

–

VAV

Oscillation Voltage level(1)

Sine wave middle

–

0.8

–

tSTUP

Oscillator Start-up Time(1)

Stable VDD - Crystal

–

Stable VDD - Resonator

–

12ms

Table 65.

Main oscillator negative resistance (module)

CA = 15pF

CA = 25pF

CA = 35pF

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

4 MHz

545

Ω

1035

Ω

–

550

Ω

1050

Ω

–

430

Ω

850

Ω

–

8 MHz

240

Ω

450

Ω

–

170

Ω

350

Ω

–

120

Ω

250

Ω

–

Crystal

Resonator

ST10F272M

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