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CDCE925PW 数据表(PDF) 5 Page - Texas Instruments

部件名 CDCE925PW
功能描述  CDCE(L)925: Flexible Low Power LVCMOS Clock Generator With SSC Support for EMI Reduction
PDF  40 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

CDCE925PW 数据表(HTML) 5 Page - Texas Instruments

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CDCE925, CDCEL925
www.ti.com
SCAS847I – JULY 2007 – REVISED OCTOBER 2016
Product Folder Links: CDCE925 CDCEL925
Submit Documentation Feedback
Copyright © 2007–2016, Texas Instruments Incorporated
Pin Functions (continued)
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
Xin/CLK
1
I
Crystal oscillator input or LVCMOS clock Input (selectable through SDA/SCL bus)
Xout
16
O
Crystal oscillator output (leave open or pull up when not used)
Y1
13
O
LVCMOS output
Y2
11
Y3
10
Y4
7
Y5
8
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3)
SDA and SCL can go up to 3.6 V as stated in the Recommended Operating Conditions table.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage, VDD
–0.5
2.5
V
Input voltage, VI
(2) (3)
–0.5
VDD + 0.5
V
Output voltage, VO
(2)
–0.5
VDD + 0.5
V
Input current, II (VI < 0, VI > VDD)
20
mA
Continuous output current, IO
50
mA
Maximum junction temperature, TJ
125
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1500
7.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VDD
Device supply voltage
1.7
1.8
1.9
V
VDDOUT
Output Yx supply voltage
CDCE925
2.3
3.6
V
CDCEL925
1.7
1.9
VIL
Low-level input voltage LVCMOS
0.3 × VDD
V
VIH
High-level input voltage LVCMOS
0.7 × VDD
V
VI(thresh)
Input voltage threshold LVCMOS
0.5 × VDD
V
VI(S)
Input voltage
S0
0
1.9
V
S1, S2, SDA, SCL; V(Ithresh) = 0.5 VDD
0
3.6
VI(CLK)
Input voltage, CLK
0
1.9
V
IOH /IOL
Output current
VDDOUT = 3.3 V
±12
mA
VDDOUT = 2.5 V
±10
VDDOUT = 1.8 V
±8
CL
Output load LVCMOS
15
pF



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