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CDCE925PW 数据表(PDF) 5 Page - Texas Instruments |
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CDCE925PW 数据表(HTML) 5 Page - Texas Instruments |
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5 / 40 page ![]() 5 CDCE925, CDCEL925 www.ti.com SCAS847I – JULY 2007 – REVISED OCTOBER 2016 Product Folder Links: CDCE925 CDCEL925 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Pin Functions (continued) PIN TYPE(1) DESCRIPTION NAME NO. Xin/CLK 1 I Crystal oscillator input or LVCMOS clock Input (selectable through SDA/SCL bus) Xout 16 O Crystal oscillator output (leave open or pull up when not used) Y1 13 O LVCMOS output Y2 11 Y3 10 Y4 7 Y5 8 (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (3) SDA and SCL can go up to 3.6 V as stated in the Recommended Operating Conditions table. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, VDD –0.5 2.5 V Input voltage, VI (2) (3) –0.5 VDD + 0.5 V Output voltage, VO (2) –0.5 VDD + 0.5 V Input current, II (VI < 0, VI > VDD) 20 mA Continuous output current, IO 50 mA Maximum junction temperature, TJ 125 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 7.3 Recommended Operating Conditions MIN NOM MAX UNIT VDD Device supply voltage 1.7 1.8 1.9 V VDDOUT Output Yx supply voltage CDCE925 2.3 3.6 V CDCEL925 1.7 1.9 VIL Low-level input voltage LVCMOS 0.3 × VDD V VIH High-level input voltage LVCMOS 0.7 × VDD V VI(thresh) Input voltage threshold LVCMOS 0.5 × VDD V VI(S) Input voltage S0 0 1.9 V S1, S2, SDA, SCL; V(Ithresh) = 0.5 VDD 0 3.6 VI(CLK) Input voltage, CLK 0 1.9 V IOH /IOL Output current VDDOUT = 3.3 V ±12 mA VDDOUT = 2.5 V ±10 VDDOUT = 1.8 V ±8 CL Output load LVCMOS 15 pF |
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