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C167CS-4RM 数据表(PDF) 46 Page - Infineon Technologies AG |
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C167CS-4RM 数据表(HTML) 46 Page - Infineon Technologies AG |
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46 / 517 page ![]() C167CS Derivatives Memory Organization User’s Manual 3-9 V2.0, 2000-07 3.3 The On-Chip XRAM The C167CS provides access to 8 KByte of on-chip extension RAM. The XRAM is located within data page 3 and is split into two XRAM areas of 2 KByte and 6 KByte (organized as 1 K × 16 and 3 K × 16). As the XRAM is connected to the internal XBUS it is accessed like external memory, however, no external bus cycles are executed for these accesses. XRAM accesses are globally enabled or disabled via bit XPEN in register SYSCON. This bit is cleared after reset and may be set via software during the initialization to allow accesses to the on-chip XRAM. When the XRAM is disabled (default after reset) all accesses to the XRAM area are mapped to external locations. The XRAM may be used for both code (instructions) and data (variables, user stack, tables, etc.) storage. Code fetches are always made on even byte addresses. The highest possible code storage location in the XRAM is either 00’E7FEH/00’D7FEH for single word instructions, or 00’E7FCH/00’D7FCH for double word instructions. The respective location must contain a branch instruction (unconditional), because sequential boundary crossing from XRAM to external memory is not supported and causes erroneous results. Any word and byte data read accesses may use the indirect or long 16-bit addressing modes. There is no short addressing mode for XRAM operands. Any word data access is made to an even byte address. The highest possible word data storage location in the XRAM is 00’E7FEH/00’D7FEH. For PEC data transfers the XRAM can be accessed independent of the contents of the DPP registers via the PEC source and destination pointers. Note: As the XRAM appears like external memory it cannot be used for the C167CS’s system stack or register banks. The XRAM is not provided for single bit storage and therefore is not bitaddressable. The on-chip XRAM is accessed with the following bus cycles: • Normal ALE • No cycle time waitstates (no READY control) • No tristate time waitstate • No Read/Write delay • 16-bit demultiplexed bus cycles (4 TCL) Even if the XRAM is used like external memory it does not occupy BUSCONx/ ADDRSELx registers but rather is selected via additional dedicated XBCON/XADRS registers. These registers are mask-programmed and are not user accessible. With these registers the address areas 00’E000H to 00’E7FFH and 00’C000H to 00’DFFFH are reserved for XRAM accesses. Note: The 6 KByte XRAM area only covers locations 00’C000H to 00’D7FFH. The address decoder, however, reserves 213 KBytes, i.e. locations 00’C000H to 00’DFFFH. |
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