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MPC8536EBVTATH 数据表(PDF) 38 Page - Freescale Semiconductor, Inc |
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MPC8536EBVTATH 数据表(HTML) 38 Page - Freescale Semiconductor, Inc |
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38 / 128 page ![]() MPC8536E PowerQUICC™ III Integrated Processor Hardware Specifications, Rev. 2 eSPI Freescale Semiconductor 38 Figure 11 provides the AC test load for the DDR bus. Figure 11. DDR AC Test Load 2.7 eSPI This section describes the DC and AC electrical specifications for the eSPI of the MPC8536E. 2.7.1 eSPI DC Electrical Characteristics Table 20 provides the DC electrical characteristics for the device eSPI. 2.7.2 eSPI AC Timing Specifications Table 21 and provide the eSPI input and output AC timing specifications. Table 20. SPI DC Electrical Characteristics Characteristic Symbol Condition Min Max Unit Output high voltage VOH IOH = –6.0 mA 2.4 — V Output low voltage VOL IOL = 6.0 mA — 0.5 V Output low voltage VOL IOL = 3.2 mA — 0.4 V Input high voltage VIH —2.0 OVDD + 0.3 V Input low voltage VIL — –0.3 0.8 V Input current IIN 0 V ≤ VIN ≤ OVDD —±10 μA Table 21. SPI AC Timing Specifications1 Characteristic Symbol 2 Min Max Unit Note SPI_MOSI output—Master data (internal clock) hold time tNIKHOX tNIKHOX 0.5 4.0 — — ns — 3 SPI_MOSI output—Master data (internal clock) delay tNIKHOV tNIKHOV — — 6.0 7.4 ns 3 — SPI_CS outputs—Master data (internal clock) hold time tNIKHOX2 0— ns — Output Z0 = 50 Ω RL = 50 Ω GVDD/2 |
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