STM32F303VC datasheet(60/133 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F302xx/STM32F303xx

60/133

Doc ID 023353 Rev 5

6.3.4

Embedded reference voltage

The parameters given in Table 26 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 22.

Table 25.

Programmable voltage detector characteristics

Symbol

Parameter

Conditions

Min(1)

Data based on characterization results only, not tested in production.

Typ

Max(1)

Unit

VPVD0

PVD threshold 0

Rising edge

2.1

2.18

2.26

Falling edge

2.08

2.16

VPVD1

PVD threshold 1

Rising edge

2.19

2.28

2.37

Falling edge

2.09

2.18

2.27

VPVD2

PVD threshold 2

Rising edge

2.28

2.38

2.48

Falling edge

2.18

2.28

2.38

VPVD3

PVD threshold 3

Rising edge

2.38

2.48

2.58

Falling edge

2.28

2.38

2.48

VPVD4

PVD threshold 4

Rising edge

2.47

2.58

2.69

Falling edge

2.37

2.48

2.59

VPVD5

PVD threshold 5

Rising edge

2.57

2.68

2.79

Falling edge

2.47

2.58

2.69

VPVD6

PVD threshold 6

Rising edge

2.66

2.78

2.9

Falling edge

2.56

2.68

2.8

VPVD7

PVD threshold 7

Rising edge

2.76

2.88

Falling edge

2.66

2.78

2.9

VPVDhyst

(2)

Guaranteed by design, not tested in production.

PVD hysteresis

100

IDD(PVD)

PVD current

consumption

0.15

0.26

µA

Table 26.

Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C 1.16

1.2

1.25

–40 °C < TA < +85 °C

1.16

1.2

1.24(1)

TS_vrefint

ADC sampling time when

reading the internal

reference voltage

2.2

µs

VRERINT

Internal reference voltage

spread over the

temperature range

VDD = 3 V ±10 mV

10(2)

TCoeff

Temperature coefficient

100(2)

ppm/°C

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