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STM32F303VC 数据表(PDF) 118 Page - STMicroelectronics |
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STM32F303VC 数据表(HTML) 118 Page - STMicroelectronics |
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118 / 133 page ![]() Electrical characteristics STM32F302xx/STM32F303xx 118/133 Doc ID 023353 Rev 5 6.3.22 Temperature sensor characteristics 6.3.23 VBAT monitoring characteristics Table 73. TS characteristics Symbol Parameter Min Typ Max Unit TL (1) 1. Guaranteed by design, not tested in production. VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope 4.0 4.3 4.6 mV/°C V25 Voltage at 25 °C 1.34 1.43 1.52 V tSTART (1) Startup time 4 - 10 µs TS_temp (1)(2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the temperature 2.2 - - µs Table 74. Temperature sensor calibration values Calibration value name Description Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF F7B8 - 0x1FFF F7B9 TS_CAL2 TS ADC raw data acquired at temperature of 110 °C VDDA= 3.3 V 0x1FFF F7C2 - 0x1FFF F7C3 Table 75. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 2 - Er(1) 1. Guaranteed by design, not tested in production. Error on Q -1 - +1 % TS_vbat (1)(2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the VBAT 1mV accuracy 2.2 - - µs |
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