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STM32F756VG 数据表(PDF) 112 Page - STMicroelectronics |
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STM32F756VG 数据表(HTML) 112 Page - STMicroelectronics |
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112 / 228 page ![]() Electrical characteristics STM32F756xx 112/228 DocID027589 Rev 4 Table 32. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.7 V VDD= 2.4 V VDD = 3.3 V VDD = 3.3 V IDD_STBY Supply current in Standby mode Backup SRAM OFF, RTC and LSE OFF 1.7 1.9 2.3 5(3) 15(3) 31(3) µA Backup SRAM ON, RTC and LSE OFF 2.4 2.6 3.0 6(3) 20(3) 40(3) Backup SRAM OFF, RTC ON and LSE in low drive mode 2.1 2.4 2.9 6 19 39 Backup SRAM OFF, RTC ON and LSE in medium low drive mode 2.1 2.4 2.9 6 19 39 Backup SRAM OFF, RTC ON and LSE in medium high drive mode 2.2 2.5 3.0 7 20 40 Backup SRAM OFF, RTC ON and LSE in high drive mode 2.3 2.6 3.1 7 20 42 Backup SRAM ON, RTC ON and LSE in low drive mode 2.7 3.0 3.6 8 23 49 Backup SRAM ON, RTC ON and LSE in Medium low drive mode 2.7 3.0 3.6 8 23 49 Backup SRAM ON, RTC ON and LSE in Medium high drive mode 2.8 3.1 3.7 8 24 50 Backup SRAM ON, RTC ON and LSE in High drive mode 2.9 3.2 3.8 8 25 51 1. PDR is OFF for VDD=1.7V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by additional 1.2 µA. 2. Guaranteed by characterization results. 3. Based on characterization, tested in production. |
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