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STM32F756VG 数据表(PDF) 112 Page - STMicroelectronics

部件名 STM32F756VG
功能描述  Up to 25 communication interfaces
PDF  228 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F756VG 数据表(HTML) 112 Page - STMicroelectronics

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Electrical characteristics
STM32F756xx
112/228
DocID027589 Rev 4
Table 32. Typical and maximum current consumptions in Standby mode
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA = 25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
VDD =
1.7 V
VDD=
2.4 V
VDD =
3.3 V
VDD = 3.3 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM OFF, RTC and
LSE OFF
1.7
1.9
2.3
5(3)
15(3)
31(3)
µA
Backup SRAM ON, RTC and
LSE OFF
2.4
2.6
3.0
6(3)
20(3)
40(3)
Backup SRAM OFF, RTC ON
and LSE in low drive mode
2.1
2.4
2.9
6
19
39
Backup SRAM OFF, RTC ON
and LSE in medium low drive
mode
2.1
2.4
2.9
6
19
39
Backup SRAM OFF, RTC ON
and LSE in medium high drive
mode
2.2
2.5
3.0
7
20
40
Backup SRAM OFF, RTC ON
and LSE in high drive mode
2.3
2.6
3.1
7
20
42
Backup SRAM ON, RTC ON
and LSE in low drive mode
2.7
3.0
3.6
8
23
49
Backup SRAM ON, RTC ON
and LSE in Medium low drive
mode
2.7
3.0
3.6
8
23
49
Backup SRAM ON, RTC ON
and LSE in Medium high drive
mode
2.8
3.1
3.7
8
24
50
Backup SRAM ON, RTC ON
and LSE in High drive mode
2.9
3.2
3.8
8
25
51
1. PDR is OFF for VDD=1.7V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by
additional 1.2 µA.
2. Guaranteed by characterization results.
3. Based on characterization, tested in production.



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