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STM32F756VG 数据表(PDF) 113 Page - STMicroelectronics

部件名 STM32F756VG
功能描述  Up to 25 communication interfaces
PDF  228 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F756VG 数据表(HTML) 113 Page - STMicroelectronics

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STM32F756xx
Electrical characteristics
196
Table 33. Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Conditions(1)
Typ
Max(2)
Unit
TA =25 °C
TA =85 °C TA =105 °C
VBAT =
1.7 V
VBAT=
2.4 V
VBAT=
3.3 V
VBAT = 3.6 V
IDD_VBAT
Supply current
in VBAT mode
Backup SRAM OFF, RTC and
LSE OFF
0.03
0.03
0.04
0.2
0.4
µA
Backup SRAM ON, RTC and
LSE OFF
0.74
0.75
0.78
3.0
7.0
Backup SRAM OFF, RTC ON
and LSE in low drive mode
0.40
0.52
0.72
2.8
6.5
Backup SRAM OFF, RTC ON
and LSE in medium low drive
mode
0.40
0.52
0.72
2.8
6.5
Backup SRAM OFF, RTC ON
and LSE in medium high drive
mode
0.54
0.64
0.85
3.3
7.6
Backup SRAM OFF, RTC ON
and LSE in high drive mode
0.62
0.73
0.94
3.6
8.4
Backup SRAM ON, RTC ON and
LSE in low drive mode
1.06
1.18
1.41
5.4
12.7
Backup SRAM ON, RTC ON and
LSE in Medium low drive mode
1.16
1.28
1.51
5.8
13.6
Backup SRAM ON, RTC ON and
LSE in Medium high drive mode
1.18
1.3
1.54
5.9
13.8
Backup SRAM ON, RTC ON and
LSE in High drive mode
1.36
1.48
1.73
6.7
15.5
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization results.



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