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STM32F756VG 数据表(PDF) 113 Page - STMicroelectronics |
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STM32F756VG 数据表(HTML) 113 Page - STMicroelectronics |
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113 / 228 page ![]() DocID027589 Rev 4 113/228 STM32F756xx Electrical characteristics 196 Table 33. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA =25 °C TA =85 °C TA =105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT= 3.3 V VBAT = 3.6 V IDD_VBAT Supply current in VBAT mode Backup SRAM OFF, RTC and LSE OFF 0.03 0.03 0.04 0.2 0.4 µA Backup SRAM ON, RTC and LSE OFF 0.74 0.75 0.78 3.0 7.0 Backup SRAM OFF, RTC ON and LSE in low drive mode 0.40 0.52 0.72 2.8 6.5 Backup SRAM OFF, RTC ON and LSE in medium low drive mode 0.40 0.52 0.72 2.8 6.5 Backup SRAM OFF, RTC ON and LSE in medium high drive mode 0.54 0.64 0.85 3.3 7.6 Backup SRAM OFF, RTC ON and LSE in high drive mode 0.62 0.73 0.94 3.6 8.4 Backup SRAM ON, RTC ON and LSE in low drive mode 1.06 1.18 1.41 5.4 12.7 Backup SRAM ON, RTC ON and LSE in Medium low drive mode 1.16 1.28 1.51 5.8 13.6 Backup SRAM ON, RTC ON and LSE in Medium high drive mode 1.18 1.3 1.54 5.9 13.8 Backup SRAM ON, RTC ON and LSE in High drive mode 1.36 1.48 1.73 6.7 15.5 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization results. |
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