STM32F756VG datasheet(128/228 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F756xx

128/228

DocID027589 Rev 4

5.3.10

Internal clock source characteristics

The parameters given in Table 41 and Table 42 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 17.

High-speed internal (HSI) RC oscillator

Figure 34. HSI deviation versus temperature

1. Guaranteed by characterization results.

Table 41. HSI oscillator characteristics (1)

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

HSI user trimming step(2)

2. Guaranteed by design.

Accuracy of the HSI oscillator

TA = –40 to 105 °C(3)

3. Guaranteed by characterization results.

− 8-4.5

TA = –10 to 85 °C(3)

− 4-

TA = 25 °C(4)

4. Factory calibrated, parts not soldered.

− 1-

tsu(HSI)(2) HSI oscillator startup time

2.2

µs

IDD(HSI)(2) HSI oscillator power consumption

µA

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