MCP8024 datasheet(8/46 Pages) MICROCHIP

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MCP8024

DS20005228A-page 8

 2013 Microchip Technology Inc.

Output Driver Source Current

ISOURCE

0.3

—

VDD = 12V, H[A:C], L[A:C]

Output Driver Sink Current

ISINK

0.3

—

VDD = 12V, H[A:C], L[A:C]

Output Driver Source

Resistance

RDSON

—17—

Ω

IOUT = 10 mA, VDD = 12V,

H[A:C], L[A:C]

Output Driver Sink Resistance

RDSON

—17—

Ω

IOUT = 10 mA, VDD = 12V,

H[A:C], L[A:C]

Output Driver UVLO

Threshold

DUVLO

7.2

8.0

—

Output Driver Bootstrap

Voltage (w/ respect to ground)

VBOOTSTRAP

—

Continuous

< 100 ms

Output Driver HS Drive

Voltage

VHS

8.0

-5.5

—

13.5

—

With respect to Phase pin

With respect to ground

Output Driver LS Drive

Voltage

VLS

8.0

13.5

With respect to ground

Output Driver Phase Pin

Voltage

VPHASE

-5.5V

—

With respect to ground

Output Driver Short Circuit

Protection Threshold

DSC

—

0.250

0.500

0.750

1.000

—

Set by DE2 CONFIG[1:0] word

- Default

Output Driver Short Circuit

Detected Propagation Delay

DSC_DEL

—

430

—

CLOAD = 1000 pF, VDD =12V,

detection after blanking

detection during blanking, value

is delay after blanking

Output Driver Turn-off

Propagation Delay

TDEL_OFF

—

100

250

CLOAD = 1000 pF, VDD =12V,

Output Driver Turn-on

Propagation Delay

TDEL_ON

—

100

250

CLOAD = 1000 pF, VDD =12V,

Standby to Motor Operational

(CLOAD = 10 µF)

CE Low to Standby State

CE Fault Clearing Pulse

tMOTOR

tSTANDBY

tFAULT_CLR

—

µs

CE High-Low-High Transition <

100 µs (Fault Clearing)

StandbystatetoOperationalstate

Time after CE = 0V

CE High-Low-High Transition

Time

Current Sense Amplifier

Input Offset Voltage

VOS

-3.0

—

+3.0

VCM = 0V

TA = -40°C to +150°C

Input Offset Temperature Drift

VOS/TA

—

2.0

—

V/°C

VCM = 0V

Input Bias Current

-1

—

µA

Common Mode Input Range

VCMR

-0.3

—

3.5

AC/DC CHARACTERISTICS (CONTINUED)

ectrical Specifications: Unless otherwise noted TJ = -40°C to +150°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Note 1:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation may cause the device operating junction temperature to exceed the

maximum 160°C rating. Sustained junction temperatures above 150°C can impact the device reliability

and OTP data retention.

1000 hour cumulative maximum for OTP data retention (typical).

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