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CS9210 数据表(PDF) 36 Page - National Semiconductor (TI) |
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CS9210 数据表(HTML) 36 Page - National Semiconductor (TI) |
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36 / 39 page ![]() www.national.com 36 Revision 3.2 Electrical Specifications (Continued) 5.4.4 Memory Interface Timing Figure 5-5. Memory Interface Signals Table 5-8. Memory Interface Timing (15 pF Output Load) Symbol Parameter 1X Refresh Mode (Min tD = 15.4 ns) 2X Refresh Mode (Min tD = 15.4 ns) Unit Min Max Min Max tOWS OEA/B# and WEA/B# setup to falling RASA/B# 3*tD–5 3*tD–5 ns tOWH OEA/B# and WEA/B# hold from rising RASA/B# 3*tD–2 3*tD–2 ns tRP RASA/B# precharge time 4*tD–2 3*tD–2 ns tRCD Falling RASA/B# to falling UCASA/B#, LCASA/B# 2*tD-1 2*tD-1 ns tCAS UCASA/B# and LCASA/B# low pulse width 2*tD tD ns tCP UCASA/B# and LCASA/B# precharge time 2*tD–3 2*tD–3 ns tASR MA_A/B setup to falling RASA/B# 3*tD–2 3*tD–2 ns tRAH MA_A/B hold from falling RASA/B# tD–1.5 tD–1.5 ns tASC MA_A/B setup to falling UCASA/B#, LCASA/B# tD–2.5 tD–2.5 ns tCAH MA_A/B hold from falling UCASA/B#, LCASA/B# 2*tD–2 tD–2 ns tDS MD_A/B write data setup to falling UCASA/B#, LCASA/B# 2*tD–5 2*tD–5 ns tDH MD_A/B write data hold from falling UCASA/B#, LCASA/B# 2*tD–2 2*tD–2 ns tDV MD_A/B read data valid from falling UCASA/B#, LCASA/B# 2*tD–10 2*tD–10 ns tASC tCAH RASA/B# UCASA/B# LCASA/B# MA_A/B[9:0] MD_A/B[15:0] OEA/B# WEA/B# tRP tOWS tOWH tRCD tCAS tCP tASR tRAH tDS tDH (write) MD_A/B[15:0] tDV (read) |
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