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Motorola Sensor Device Data

www.motorola.com/semiconductors

Media Compatibility Disclaimer

Motorola has tested media tolerant sensor devices in

selected solutions or environments and test results are

based on particular conditions and procedures selected by

Motorola. Customers are advised that the results may vary

for actual services conditions. Customers are cautioned that

they are responsible to determine the media compatibility of

sensor devices in their applications and the foreseeable use

and misuses of their applications.

Sensor Media Compatibility: Issues and Answers

T. Maudie, D. J. Monk, D. Zehrbach, and D. Stanerson

Motorola Semiconductor Products Sector, Sensor Products Division

5005 E. McDowell Rd., Phoenix, AZ 85018

ABSTRACT

As sensors and actuators are embedded deeper into

electronic systems, the issue of media compatibility as well as

sensor and actuator performance and survivability becomes

increasingly critical. With a large number of definitions and

even more explanations of what media compatibility is, there

is a ground swell of confusion not only within the industry, but

among end users as well. The sensor industry must respond

to create a clear definition of what media compatibility is, then

strive to provide a comprehensive understanding and industry

wide agreement on what is involved in assessing media

tolerance and compatibility. Finally, the industry must create

a standard set of engineering parameters to design, evaluate,

test, and ultimately qualify sensor and actuators functioning in

various media conditions. This paper defines media

compatibility, identifies pertinent compatibility issues, and

recommends a path to industry standardization.

INTRODUCTION

Microelectromechanical System (MEMS) reliability in

various media is a subject that has not yet received much

attention in the literature yet [1–3], but does bring up many

potential issues. The effects of long term media exposure to

the silicon MEMS device and material still need answers [4].

Testing can result in predictable silicon or package related

failures, but due to the complexity of the mechanisms,

deleterious failures can be observed. The sensor may be

exposed to diverse media in markets such as automotive,

industrial, and medical. This media may include polar or

nonpolar organic liquids, acids, bases, or aqueous solutions.

Integrated circuits (ICs) have long been exposed to

temperature extremes, humid environments, and mechanical

tests to demonstrate or predict the reliability of the device for

the application. Unlike a typical IC, a sensor often must exist

in direct contact with a harsh environment. The lack of harsh

media simulation test standardization for these direct contact

situations

necessitates

development

methods

and

hardware to perform reliability tests.

This paper was presented at Sensors Expo, Anaheim, CA, and is

reprinted with permission, Sensors Magazine (174 Concord St.,

Peterborough, NH 03458) and Expocon Management Associates,

Inc. (P.O. Box 915, Fairfield, CT 06430).

The applicability of media compatibility affects all sensors to

some degree, but perhaps none more dramatically than a

piezoresistive pressure sensor. In order to provide an

accurate, linear output with applied pressure, the media

should come in direct contact with the silicon die. Any barrier

provided between the die and the media, limits the device

performance. A typical piezoresistive diaphragm pressure

sensor manufactured using bulk micromachining techniques

is shown in Figure 1. A definition for a media compatible

pressure sensor will be proposed.

To ensure accurate media testing, the requirements and

methods need to be understood, as well as what constitutes

a failure. An understanding of the physics of failure can

significantly reduce the development cycle time and produce

higher

quality

product

[5,6].

The

focus

the

physics–of–failure approach includes the failure mechanism,

accelerating environment, and failure mode. The requirement

for a typical pressure sensor application involves long term

exposure to a variety of media at an elevated temperature and

may include additional acceleration components such as

static or cyclic temperature and pressure.

Figure 1. Typical bulk micromachined silicon

piezoresistive pressure sensor device

and package configuration.

DIE

RTV DIE BOND

ETCHED

METALLIZATION

EPOXY

WIRE

SILICON

DIFFUSED

DIAPHRAGM

LEAD

STRAIN GAUGE

INTERCONNECT

FRAME

CASE

CAVITY

WAFER

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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