L99LD21 datasheet(54/73 Pages) STMICROELECTRONICS

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Electrical specifications

L99LD21

54/73

DS11130 Rev 5

6.4.2

Boost controller

Table 36. Boost gate driver

Symbol

Parameter

Test conditions

Min

Typ

Max Unit

tG0

Gate driver output rise and fall

time

VS = 13 V; CG0 = 4.7 nF;

VGS_G0 rising from 10% ÷ 90%

VS = 13 V; CG0 = 4.7 nF;

VGS_G0 falling from 90% ÷ 10%

VG0_H

Gate driver High output voltage

0.9 * V5V

V5V

VG0_L

Gate driver Low output voltage

0.3

V5V

Output Voltage of 5V LDO

VS = 13 V; Cout = 4.7 µF,

External maximum load current:

Iload = 10 mA

4.75

5.25

I5V

(1)

Current capability of 5V LDO

VS = 13 V

Output of 5V LDO connected to

ground

I5V = Qtgate x Fboost_sw (external MOSFET total gate charge multiplied by boost switching frequency).

Table 37. Boost controller

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

FBOOST_SW_MAX

Boost maximum operative

switching frequency

CR#3<9:7> (000)b ÷ (111)b

450

kHz

FBOOST_SW_MIN

Boost minimum operative

switching frequency

CR#3<9:7> (000)b ÷ (111)b

100

kHz

FBOOST_STEP

Boost Switching Frequency

Step

kHz

FBOOST_ACC

Boost Switching Frequency

accuracy

T = 125 °C

-5

VBOOST_LIM

Boost maximum current

sense differential voltage

(SP, SN pin) for current

limitation

VS = 13 V

Boost enabled

350

390

430

tBOOST_MIN

Minimum boost on-time

VS = 13 V; SP pin = 3.3 V

Boost enabled

200

600

DBOOST_MAX

Boost maximum duty cycle

VS = 13 V; SP pin = 0 V

Boost enabled

V5V_DROP

Min voltage drop of 5V LDO

respect to VS:

V5V_DROP = (VS – V5V)

I(5V5) = -1 mA

0.1

0.3

tSS

Soft start duration

Guaranteed by scan and

frequency oscillator (20 MHz,

typical)

8ms

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