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STM32H757AI 数据表(PDF) 142 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 142 Page - STMicroelectronics |
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142 / 251 page ![]() Electrical characteristics STM32H757xI 142/251 DS12931 Rev 1 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 24. Typical application with a 32.768 kHz crystal 1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.10 Internal clock source characteristics The parameters given in Table 55 to Table 58 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23: General operating conditions. 48 MHz high-speed internal RC oscillator (HSI48) ai17531b OSC32_OU T OSC32_IN fLSE CL1 RF STM32 32.768 kH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 55. HSI48 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI48 HSI48 frequency VDD=3.3 V, TJ=30 °C 47.5(1) 48 48.5(1) MHz TRIM(2) USER trimming step - - 0.175 - % USER TRIM COVERAGE(3) USER TRIMMING Coverage ± 32 steps ±4.79 ±5.60 - % DuCy(HSI48)(2) Duty Cycle - 45 - 55 % ACCHSI48_REL(3)(4) Accuracy of the HSI48 oscillator over temperature (factory calibrated) TJ=-40 to 125 °C –4.5 - 3.5 % ∆VDD(HSI48)(3) HSI48 oscillator frequency drift with VDD(5) VDD=3 to 3.6 V - 0.025 0.05 % VDD=1.62 V to 3.6 V - 0.05 0.1 tsu(HSI48)(2) HSI48 oscillator start-up time - - 2.1 4.0 µs IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA NT jitter Next transition jitter Accumulated jitter on 28 cycles(6) - - ± 0.15 - ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(6) - - ± 0.25 - ns 1. Guaranteed by test in production. 2. Guaranteed by design. 3. Guaranteed by characterization. 4. ∆fHSI = ACCHSI48_REL + ∆VDD. |
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