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STM32H757AI 数据表(PDF) 142 Page - STMicroelectronics

部件名 STM32H757AI
功能描述  Dual 32-bit Arm® Cortex®-M7 up to 480MHz and -M4 MCUs, 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS, DSI, crypto
PDF  251 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32H757AI 数据表(HTML) 142 Page - STMicroelectronics

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Electrical characteristics
STM32H757xI
142/251
DS12931 Rev 1
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 24. Typical application with a 32.768 kHz crystal
1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.
6.3.10
Internal clock source characteristics
The parameters given in Table 55 to Table 58 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 23: General
operating conditions.
48 MHz high-speed internal RC oscillator (HSI48)
ai17531b
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32
32.768 kH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 55. HSI48 oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI48
HSI48 frequency
VDD=3.3 V,
TJ=30 °C
47.5(1)
48
48.5(1) MHz
TRIM(2)
USER trimming step
-
-
0.175
-
%
USER TRIM
COVERAGE(3)
USER TRIMMING Coverage
± 32 steps
±4.79
±5.60
-
%
DuCy(HSI48)(2)
Duty Cycle
-
45
-
55
%
ACCHSI48_REL(3)(4)
Accuracy of the HSI48 oscillator over
temperature (factory calibrated)
TJ=-40 to 125 °C
–4.5
-
3.5
%
∆VDD(HSI48)(3)
HSI48 oscillator frequency drift with
VDD(5)
VDD=3 to 3.6 V
-
0.025
0.05
%
VDD=1.62 V to 3.6 V
-
0.05
0.1
tsu(HSI48)(2)
HSI48 oscillator start-up time
-
-
2.1
4.0
µs
IDD(HSI48)(2)
HSI48 oscillator power consumption
-
-
350
400
µA
NT jitter
Next transition jitter
Accumulated jitter on 28 cycles(6)
-
-
± 0.15
-
ns
PT jitter
Paired transition jitter
Accumulated jitter on 56 cycles(6)
-
-
± 0.25
-
ns
1. Guaranteed by test in production.
2. Guaranteed by design.
3. Guaranteed by characterization.
4.
∆fHSI = ACCHSI48_REL + ∆VDD.



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