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STM32H757AI 数据表(PDF) 143 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 143 Page - STMicroelectronics |
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143 / 251 page ![]() DS12931 Rev 1 143/251 STM32H757xI Electrical characteristics 230 64 MHz high-speed internal RC oscillator (HSI) 4 MHz low-power internal RC oscillator (CSI) 5. These values are obtained by using the formula: (Freq(3.6V) - Freq(3.0V)) / Freq(3.0V) or (Freq(3.6V) - Freq(1.62V)) / Freq(1.62V). 6. Jitter measurements are performed without clock source activated in parallel. Table 56. HSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI HSI frequency VDD=3.3 V, TJ=30 °C 63.7(2) 64 64.3(2) MHz TRIM HSI user trimming step Trimming is not a multiple of 32 - 0.24 0.32 % Trimming is 128, 256 and 384 −5.2 −1.8 - Trimming is 64, 192, 320 and 448 −1.4 −0.8 - Other trimming are a multiple of 32 (not including multiple of 64 and 128) −0.6 −0.25 - DuCy(HSI) Duty Cycle - 45 - 55 % ΔVDD (HSI) HSI oscillator frequency drift over VDD (reference is 3.3 V) VDD=1.62 to 3.6 V −0.12 - 0.03 % ΔTEMP (HSI) HSI oscillator frequency drift over temperature (reference is 64 MHz) TJ=-20 to 105 °C −1(3) -1(3) % TJ=−40 to TJmax °C −2(3) -1(3) tsu(HSI) HSI oscillator start-up time - - 1.4 2 µs tstab(HSI) HSI oscillator stabilization time at 1% of target frequency - 4 8 µs IDD(HSI) HSI oscillator power consumption - - 300 400 µA 1. Guaranteed by design unless otherwise specified. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 57. CSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fCSI CSI frequency VDD=3.3 V, TJ=30 °C 3.96(2) 44.04(2) MHz TRIM Trimming step - - 0.35 - % DuCy(CSI) Duty Cycle - 45 - 55 % ∆TEMP (CSI) CSI oscillator frequency drift over temperature TJ = 0 to 85 °C - −3.7(3) 4.5(3) % TJ = −40 to 125 °C - −11(3) 7.5(3) DVDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V - − 0.06 0.06 % |
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