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STM32H757AI 数据表(PDF) 144 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 144 Page - STMicroelectronics |
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144 / 251 page  Electrical characteristics STM32H757xI 144/251 DS12931 Rev 1 Low-speed internal (LSI) RC oscillator tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - - 4 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 57. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 58. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4(1) 1. Guaranteed by test in production. 32 32.6(1) kHz TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29.76(2) 2. Guaranteed by characterization results. - 33.6(2) TJ = –40 to 125 °C, VDD = 1.62 to 3.6 V 29.4 - 33.6 tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(3) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA |
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