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STM32H757AI 数据表(PDF) 161 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 161 Page - STMicroelectronics |
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161 / 251 page ![]() DS12931 Rev 1 161/251 STM32H757xI Electrical characteristics 230 Output buffer timing characteristics (HSLV option enabled) Table 76. Output timing characteristics (HSLV ON)(1) Speed Symbol Parameter conditions Min Max Unit 00 Fmax(2) Maximum frequency C=50 pF, 1.62 V≤VDD≤2.7 V - 10 MHz C=30 pF, 1.62 V≤VDD≤2.7 V - 10 C=10 pF, 1.62 V≤VDD≤2.7 V - 10 tr/tf(3) Output high to low level fall time and output low to high level rise time C=50 pF, 1.62 V≤VDD≤2.7 V - 11 ns C=30 pF, 1.62 V≤VDD≤2.7 V - 9 C=10 pF, 1.62 V≤VDD≤2.7 V - 6.6 01 Fmax(2) Maximum frequency C=50 pF, 1.62 V≤VDD≤2.7 V - 50 MHz C=30 pF, 1.62 V≤VDD≤2.7 V - 58 C=10 pF, 1.62 V≤VDD≤2.7 V - 66 tr/tf(3) Output high to low level fall time and output low to high level rise time C=50 pF, 1.62 V≤VDD≤2.7 V - 6.6 ns C=30 pF, 1.62 V≤VDD≤2.7 V - 4.8 C=10 pF, 1.62 V≤VDD≤2.7 V - 3 10 Fmax(2) Maximum frequency C=50 pF, 1.62 V≤VDD≤2.7 V(4) -55 MHz C=30 pF, 1.62 V≤VDD≤2.7 V(4) -80 C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 133 tr/tf(3) Output high to low level fall time and output low to high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V(4) -5.8 ns C=30 pF, 1.62 V≤VDD≤2.7 V(4) -4 C=30 pF, 1.62 V≤VDD≤2.7 V(4) -2.4 11 Fmax(2) Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V(4) -60 MHz C=30 pF, 1.62 V≤VDD≤2.7 V(4) -90 C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 175 tr/tf(3) Output high to low level fall time and output low to high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V(4) -5.3 ns C=30 pF, 1.62 V≤VDD≤2.7 V(4) -3.6 C=30 pF, 1.62 V≤VDD≤2.7 V(4) -1.9 1. Guaranteed by design. 2. The maximum frequency is defined with the following conditions: (tr+tf) ≤ 2/3 T Skew ≤ 1/20 T 45%<Duty cycle<55% 3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively. 4. Compensation system enabled. |
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