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STM32H757AI 数据表(PDF) 160 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 160 Page - STMicroelectronics |
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160 / 251 page ![]() Electrical characteristics STM32H757xI 160/251 DS12931 Rev 1 10 Fmax(3) Maximum frequency C=50 pF, 2.7 V≤VDD≤3.6 V(5) -85 MHz C=50 pF, 1.62 V≤VDD≤2.7 V(5) -35 C=30 pF, 2.7 V≤VDD≤3.6 V(5) -110 C=30 pF, 1.62 V≤VDD≤2.7 V(5) -40 C=10 pF, 2.7 V≤VDD≤3.6 V(5) - 166 C=10 pF, 1.62 V≤VDD≤2.7 V(5) - 100 tr/tf(4) Output high to low level fall time and output low to high level rise time C=50 pF, 2.7 V≤VDD≤3.6 V(5) -3.8 ns C=50 pF, 1.62 V≤VDD≤2.7 V(5) -6.9 C=30 pF, 2.7 V≤VDD≤3.6 V(5) -2.8 C=30 pF, 1.62 V≤VDD≤2.7 V(5) -5.2 C=10 pF, 2.7 V≤VDD≤3.6 V(5) -1.8 C=10 pF, 1.62 V≤VDD≤2.7 Vv -3.3 11 Fmax(3) Maximum frequency C=50 pF, 2.7 V≤VDD≤3.6 Vv - 100 MHz C=50 pF, 1.62 V≤VDD≤2.7 V(5) -50 C=30 pF, 2.7 V≤VDD≤3.6 Vv - 133 C=30 pF, 1.62 V≤VDD≤2.7 V(5) -66 C=10 pF, 2.7 V≤VDD≤3.6 V(5) - 220 C=10 pF, 1.62 V≤VDD≤2.7 V(5) -85 tr/tf(4) Output high to low level fall time and output low to high level rise time C=50 pF, 2.7 V≤VDD≤3.6 V(5) -3.3 ns C=50 pF, 1.62 V≤VDD≤2.7 V(5) -6.6 C=30 pF, 2.7 V≤VDD≤3.6 V(5) -2.4 C=30 pF, 1.62 V≤VDD≤2.7 V(5) -4.5 C=10 pF, 2.7 V≤VDD≤3.6 V(5) -1.5 C=10 pF, 1.62 V≤VDD≤2.7 V(5) -2.7 1. Guaranteed by design. 2. The frequency of the GPIOs that can be supplied in VBAT mode (PC13, PC14, PC15 and PI8) is limited to 2 MHz 3. The maximum frequency is defined with the following conditions: (tr+tf) ≤ 2/3 T Skew ≤ 1/20 T 45%<Duty cycle<55% 4. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively. 5. Compensation system enabled. Table 75. Output timing characteristics (HSLV OFF)(1)(2) (continued) Speed Symbol Parameter conditions Min Max Unit |
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