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STM32H757AI 数据表(PDF) 156 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 156 Page - STMicroelectronics |
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156 / 251 page ![]() Electrical characteristics STM32H757xI 156/251 DS12931 Rev 1 All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements for FT I/Os is shown in Figure 27. Figure 27. VIL/VIH for all I/Os except BOOT0 Output driving current The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ±20 mA (with a relaxed VOL/VOH). In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 6.2. In particular: • The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating ΣIVDD (see Table 21). • The sum of the currents sunk by all the I/Os on VSS plus the maximum Run consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating ΣIVSS (see Table 21). 6. VIN must be less than Max(VDDXXX) + 3.6 V. 7. To sustain a voltage higher than MIN(VDD, VDDA, VDD33USB) +0.3 V, the internal pull-up and pull-down resistors must be disabled. 8. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). 9. Max(VDDXXX) is the maximum value of all the I/O supplies. MSv46121V3 0 0.5 1 1.5 2 2.5 3 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 TLL requirement: VIHmin = 2 V TLL requirement: VILmin = 0.8 V CMOS requirement: VIHmin =0.7V DD CMOS requirement: VILmax =0.3VDD Based on simulation VIHmin= 0.47VDD +0.25 Based on simulation VILmax =0.4VDD -0.1 |
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