STM32H757AI datasheet(153/251 Pages) STMICROELECTRONICS

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DS12931 Rev 1

153/251

STM32H757xI

Electrical characteristics

230

6.3.16

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each

sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC

JS-001 and ANSI/ESDA/JEDEC JS-002 standards.

Static latchup

Two complementary static tests are required on six parts to assess the latchup

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with JESD78 IC latchup standard.

Table 69. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body

model)

TA= +25 °C conforming to

ANSI/ESDA/JEDEC JS-

001

All

1000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA= +25 °C conforming to

ANSI/ESDA/JEDEC JS-

002

All

250

1. Guaranteed by characterization results.

Table 70. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latchup class

TA = +25 °C conforming to JESD78

II level A

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