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STM32H757AI 数据表(PDF) 150 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 150 Page - STMicroelectronics |
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150 / 251 page  Electrical characteristics STM32H757xI 150/251 DS12931 Rev 1 6.3.14 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. tWAKEUP Startup delay CEXT = 2.2 µF - 80 - µs CEXT = 3.3 µF - - 160 IINRUSH Inrush current on VDDDSI External capacitor load at start - 60 250 mA 1. Based on test during characterization. 2. CEXT recommended value is 2.2 μF to achieve a better dynamic performance of the regulator. A 1 μF capacitor can be used only if the minimum value does not drop below 0.5 μF. Table 63. DSI regulator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 64. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode - 6.5 - mA Write / Erase 16-bit mode - 11.5 - Write / Erase 32-bit mode - 20 - Write / Erase 64-bit mode - 35 - Table 65. Flash memory programming (single bank configuration nDBANK=1) Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Word (266 bits) programming time Program/erase parallelism x 8 - 290 580(2) µs Program/erase parallelism x 16 - 180 360 Program/erase parallelism x 32 - 130 260 Program/erase parallelism x 64 - 100 200 tERASE128KB Sector (128 KB) erase time Program/erase parallelism x 8 - 2 4 s Program/erase parallelism x 16 - 1.8 3.6 Program/erase parallelism x 32 - tME Mass erase time Program/erase parallelism x 8 - 13 26 Program/erase parallelism x 16 - 8 16 Program/erase parallelism x 32 - 6 12 Program/erase parallelism x 64 - 5 10 |
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