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STM32H757AI 数据表(PDF) 154 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 154 Page - STMicroelectronics |
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154 / 251 page ![]() Electrical characteristics STM32H757xI 154/251 DS12931 Rev 1 6.3.17 I/O current injection characteristics As a general rule, a current injection to the I/O pins, due to external voltage below VSS or above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when an abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during the device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency deviation). The following tables are the compilation of the SIC1/SIC2 and functional ESD results. Negative induced A negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. Table 71. I/O current injection susceptibility(1) Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ PA7, PC5, PG1, PB14, PJ7, PA11, PA12, PA13, PA14, PA15, PJ12, PB4 50 mA PA2, PH2, PH3, PE8, PA6, PA7, PC4, PE7, PE10, PE11 0 NA PA0, PA_C, PA1, PA1_C, PC2, PC2_C, PC3, PC3_C, PA4, PA5, PH4, PH5, BOOT0 00 All other I/Os 5 NA 1. Guaranteed by characterization . |
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