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STM32H757AI 数据表(PDF) 155 Page - STMicroelectronics |
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STM32H757AI 数据表(HTML) 155 Page - STMicroelectronics |
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155 / 251 page ![]() DS12931 Rev 1 155/251 STM32H757xI Electrical characteristics 230 6.3.18 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 72: I/O static characteristics are derived from tests performed under the conditions summarized in Table 23: General operating conditions. All I/Os are CMOS and TTL compliant (except for BOOT0). Table 72. I/O static characteristics Symbol Parameter Condition Min Typ Max Unit VIL I/O input low level voltage except BOOT0 1.62 V<VDDIOx<3.6 V -- 0.3VDD(1) V I/O input low level voltage except BOOT0 -- 0.4VDD−0. 1(2) BOOT0 I/O input low level voltage - - 0.19VDD+ 0.1(2) VIH I/O input high level voltage except BOOT0 1.62 V<VDDIOx<3.6 V 0.7VDD(1) -- V I/O input high level voltage except BOOT0(3) 0.47VDD+0. 25(2) -- BOOT0 I/O input high level voltage(3) 0.17VDD+0. 6(2) -- VHYS(2) TT_xx, FT_xxx and NRST I/O input hysteresis 1.62 V< VDDIOx <3.6 V - 250 - mV BOOT0 I/O input hysteresis - 200 - Ileak(4) FT_xx Input leakage current(2) 0< VIN ≤ Max(VDDXXX)(9) -- +/-250 nA Max(VDDXXX) < VIN ≤ 5.5 V (5)(6)(9) - - 1500 FT_u IO 0< VIN ≤ Max(VDDXXX)(9) -- +/- 350 Max(VDDXXX) < VIN ≤ 5.5 V (5)(6)(9) - - 5000(7) TT_xx Input leakage current 0< VIN ≤ Max(VDDXXX) (9) -- +/-250 VPP (BOOT0 alternate function) 0< VIN ≤ VDDIOX -- 15 VDDIOX < VIN ≤ 9 V 35 RPU Weak pull-up equivalent resistor(8) VIN=VSS 30 40 50 kΩ RPD Weak pull-down equivalent resistor(8) VIN=VDD(9) 30 40 50 CIO I/O pin capacitance - - 5 - pF 1. Compliant with CMOS requirements. 2. Guaranteed by design. 3. VDDIOx represents VDDIO1, VDDIO2 or VDDIO3. VDDIOx= VDD. 4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following formula: ITotal_Ileak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max). 5. All FT_xx IO except FT_lu, FT_u and PC3. |
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