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M58WR032EB 数据表(PDF) 58 Page - STMicroelectronics |
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M58WR032EB 数据表(HTML) 58 Page - STMicroelectronics |
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58 / 81 page ![]() M58WR032ET, M58WR032EB 58/81 Table 33. Device Geometry Definition Offset Word Mode Data Description Value 27h 0016h Device Size = 2n in number of Bytes 4 MBytes 28h 29h 0001h 0000h Flash Device Interface Code description x16 Async. 2Ah 2Bh 0003h 0000h Maximum number of bytes in multi-byte program or page = 2n 8 Byte 2Ch 0002h Number of identical sized erase block regions within the device bit 7 to 0 = x = number of Erase Block Regions 2 2Dh 2Eh 003Eh 0000h Region 1 Information Number of identical-size erase blocks = 003Eh+1 63 2Fh 30h 0000h 0001h Region 1 Information Block size in Region 1 = 0100h * 256 byte 64 KByte 31h 32h 0007h 0000h Region 2 Information Number of identical-size erase blocks = 0007h+1 8 33h 34h 0020h 0000h Region 2 Information Block size in Region 2 = 0020h * 256 byte 8 KByte 35h 38h Reserved Reserved for future erase block region information NA 2Dh 2Eh 0007h 0000h Region 1 Information Number of identical-size erase block = 0007h+1 8 2Fh 30h 0020h 0000h Region 1 Information Block size in Region 1 = 0020h * 256 byte 8 KBytes 31h 32h 003Eh 0000h Region 2 Information Number of identical-size erase block = 003Eh+1 63 33h 34h 0000h 0001h Region 2 Information Block size in Region 2 = 0100h * 256 byte 64 KBytes 35h 38h Reserved Reserved for future erase block region information NA |
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