M58WR032EB datasheet(7/81 Pages) STMICROELECTRONICS

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M58WR032ET, M58WR032EB

SUMMARY DESCRIPTION

The M58WR032E is a 32 Mbit (2Mbit x16) non-vol-

atile Flash memory that may be erased electrically

at block level and programmed in-system on a

Word-by-Word basis using a 1.65V to 2.2V VDD

supply for the circuitry and a 1.65V to 3.3V VDDQ

supply for the Input/Output pins. An optional 12V

VPP power supply is provided to speed up custom-

er programming.

The device features an asymmetrical block archi-

tecture. M58WR032E has an array of 71 blocks,

and is divided into 4 Mbit banks. There are 7 banks

each containing 8 main blocks of 32 KWords, and

one parameter bank containing 8 parameter

blocks of 4 KWords and 7 main blocks of 32

KWords. The Multiple Bank Architecture allows

Dual Operations, while programming or erasing in

one bank, Read operations are possible in other

banks. Only one bank at a time is allowed to be in

Program or Erase mode. It is possible to perform

burst reads that cross bank boundaries. The bank

architecture is summarized in Table 2., and the

memory maps are shown in Figure 4. The Param-

eter Blocks are located at the top of the memory

address space for the M58WR032ET, and at the

bottom for the M58WR032EB.

Each block can be erased separately. Erase can

be suspended, in order to perform program in any

other block, and then resumed. Program can be

suspended to read data in any other block and

then resumed. Each block can be programmed

and erased over 100,000 cycles using the supply

voltage VDD. There are two Enhanced Factory

programming commands available to speed up

programming.

Program and Erase commands are written to the

Command Interface of the memory. An internal

Program/Erase Controller takes care of the tim-

ings necessary for program and erase operations.

The end of a program or erase operation can be

detected and any error conditions identified in the

Status Register. The command set required to

control the memory is consistent with JEDEC stan-

dards.

The device supports synchronous burst read and

asynchronous read from all blocks of the memory

array; at power-up the device is configured for

asynchronous read. In synchronous burst mode,

data is output on each clock cycle at frequencies

of up to 54MHz.

The device features an Automatic Standby mode.

When the bus is inactive during asynchronous

read operations, the device automatically switches

to the Automatic Standby mode. In this condition

the power consumption is reduced to the standby

value IDD4 and the outputs are still driven.

The M58WR032E features an instant, individual

block locking scheme that allows any block to be

locked or unlocked with no latency, enabling in-

stant code and data protection. All blocks have

three levels of protection. They can be locked and

locked-down individually preventing any acciden-

tal programming or erasure. There is an additional

hardware protection against program and erase.

When VPP ≤ VPPLK all blocks are protected against

program or erase. All blocks are locked at Power-

Up.

The device includes a Protection Register and a

Security Block to increase the protection of a sys-

tem’s design. The Protection Register is divided

into two segments: a 64 bit segment containing a

unique device number written by ST, and a 128 bit

segment One-Time-Programmable (OTP) by the

user. The user programmable segment can be

permanently protected. The Security Block, pa-

rameter block 0, can be permanently protected by

the user. Figure 5., shows the Security Block and

Protection Register Memory Map.

The memory is offered in a VFBGA56, 7.7 x 9 mm

0.75 mm ball pitch package and is supplied with all

the bits erased (set to ’1’).

M58WR032EB 数据表(PDF) 7 Page - STMicroelectronics

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