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M58WR032EB 数据表(PDF) 68 Page - STMicroelectronics |
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M58WR032EB 数据表(HTML) 68 Page - STMicroelectronics |
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68 / 81 page ![]() M58WR032ET, M58WR032EB 68/81 Figure 25. Block Erase Flowchart and Pseudo Code Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations. 2. Any address within the bank can be used also. Write 20h (2) AI06174b Start Write Block Address & D0h Read Status Register (2) YES NO SR7 = 1 YES NO SR3 = 0 YES SR4, SR5 = 1 VPP Invalid Error (1) Command Sequence Error (1) NO NO SR5 = 0 Erase Error (1) End YES NO SR1 = 0 Erase to Protected Block Error (1) YES erase_command ( blockToErase ) { writeToFlash (blockToErase, 0x20) ; /*see note (2) */ writeToFlash (blockToErase, 0xD0) ; /* only A12-A20 are significannt */ /* Memory enters read status state after the Erase Command */ } while (status_register.SR7== 0) ; do { status_register=readFlash (blockToErase) ; /* see note (2) */ /* E or G must be toggled*/ if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; if ( (status_register.SR4==1) && (status_register.SR5==1) ) /* command sequence error */ error_handler ( ) ; if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; if ( (status_register.SR5==1) ) /* erase error */ error_handler ( ) ; } |
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