M58WR032EB datasheet(13/81 Pages) STMICROELECTRONICS

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M58WR032ET, M58WR032EB

COMMAND INTERFACE

All Bus Write operations to the memory are inter-

preted by the Command Interface. Commands

consist of one or more sequential Bus Write oper-

ations. An internal Program/Erase Controller han-

dles all timings and verifies the correct execution

of the Program and Erase commands. The Pro-

gram/Erase Controller provides a Status Register

whose output may be read at any time to monitor

the progress or the result of the operation.

The Command Interface is reset to read mode

when power is first applied, when exiting from Re-

set or whenever VDD is lower than VLKO. Com-

mand sequences must be followed exactly. Any

invalid combination of commands will be ignored.

Refer to Table 4., Command Codes, and APPEN-

DIX D., Tables 40, 41, 42 and 43, Command Inter-

face States - Modify and Lock Tables, for a

summary of the Command Interface.

The Command Interface is split into two types of

commands: Standard commands and Factory

Program commands. The following sections ex-

plain in detail how to perform each command.

Table 4. Command Codes

Hex Code

Command

01h

Block Lock Confirm

03h

Set Configuration Register Confirm

10h

Alternative Program Setup

20h

Block Erase Setup

2Fh

Block Lock-Down Confirm

30h

Enhanced Factory Program Setup

35h

Double Word Program Setup

40h

Program Setup

50h

Clear Status Register

56h

Quadruple Word Program Setup

60h

Block Lock Setup, Block Unlock Setup,

Block Lock Down Setup and Set

Configuration Register Setup

70h

Read Status Register

75h

Quadruple Enhanced Factory Program

Setup

80h

Bank Erase Setup

90h

Read Electronic Signature

98h

Read CFI Query

B0h

Program/Erase Suspend

C0h

Protection Register Program

D0h

Program/Erase Resume, Block Erase

Confirm, Bank Erase Confirm, Block

Unlock Confirm or Enhanced Factory

Program Confirm

FFh

Read Array

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